Dynamics of p + polysilicon gate depletion due to the formation of boron compounds in TiSi 2
نویسنده
چکیده
In dual workfunction gate technologies it can be observed, that p+ poly gates of pMOSFETs tend to lose boron doping. This work presents a model for the transport of Si and B in the TiSi~/polysilicon bilayer system that can explain the saturation of the B dose loss.
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